| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| DMN1019UFDE-7 | Diodes Inc | MOSFET N CH 12V 11A U-DFN2020-6E | 0 | 3,000:$0.17252 6,000:$0.16139 15,000:$0.15026 30,000:$0.14246 75,000:$0.13913 150,000:$0.13356 |
| DMN3033LDM-7 | Diodes Inc | MOSFET N-CH 30V 6.9A SOT-26 | 0 | 3,000:$0.16275 |
| DMG7408SFG-7 | Diodes Inc | MOSF N CH 30V 7A 3333-8 | 0 | 1:$0.59000 10:$0.45900 25:$0.38760 100:$0.31590 250:$0.26164 500:$0.21612 1,000:$0.16188 |
| DMG7408SFG-7 | Diodes Inc | MOSF N CH 30V 7A 3333-8 | 0 | 1:$0.59000 10:$0.45900 25:$0.38760 100:$0.31590 250:$0.26164 500:$0.21612 1,000:$0.16188 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 12V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 11A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 10 毫歐 @ 9.7A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 800mV @ 250µA |
| 閘電荷(Qg) @ Vgs: | 50.6nC @ 8V |
| 輸入電容 (Ciss) @ Vds: | 2425pF @ 10V |
| 功率 - 最大: | 690mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-UDFN |
| 供應(yīng)商設(shè)備封裝: | * |
| 包裝: | 帶卷 (TR) |