| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SUM90P10-19-E3 | Vishay Siliconix | MOSFET P-CH D-S 100V D2PAK | 0 | 800:$2.56500 |
| IRF830ASTRLPBF | Vishay Siliconix | MOSFET N-CH 500V 5.0A D2PAK | 0 | 800:$0.83003 |
| SI8416DB-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 16A MICRO | 0 | |
| SI7866ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V PPAK 8SOIC | 0 | 3,000:$0.96930 |
| SI4176DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8-SOIC | 0 | 2,500:$0.26100 |
| SI1433DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 1.9A SC70-6 | 0 | 3,000:$0.24650 |
| SUP85N03-3M6P-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V TO220AB | 0 | 500:$0.94500 |
| SQR50N06-07L-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO263 | 0 | 2,000:$0.94500 |
| SI9410BDY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 30V 8SOIC | 0 | 2,500:$0.24360 |
| IRF9530STRLPBF | Vishay Siliconix | MOSFET P-CH 100V 12A D2PAK | 0 | 800:$0.94343 |
| SI4836DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 12V 8-SOIC | 0 | 2,500:$0.93690 |
| SIRA00DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 60A SO8 PWR PK | 0 | 1:$2.38000 25:$1.83600 100:$1.66600 250:$1.49600 500:$1.29200 1,000:$1.08800 |
| SIA436DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V D-S SC70-6L | 9 | 1:$0.70000 25:$0.54400 100:$0.48000 250:$0.41600 500:$0.35200 1,000:$0.28000 |
| SIA436DJ-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V D-S SC70-6L | 9 | 1:$0.70000 25:$0.54400 100:$0.48000 250:$0.41600 500:$0.35200 1,000:$0.28000 |
| SUM110N03-03P-E3 | Vishay Siliconix | MOSFET N-CH 30V 110A D2PAK | 0 | 800:$1.86000 |
| IRLZ44STRRPBF | Vishay Siliconix | MOSFET N-CH 60V 50A D2PAK | 0 | 800:$1.49940 |
| SI7862ADP-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 16V PPAK 8SOIC | 0 | 3,000:$0.87210 |
| SI3465DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 3A 6-TSOP | 0 | 3,000:$0.21750 |
| SI3447BDV-T1-GE3 | Vishay Siliconix | MOSFET P-CH 12V 4.5A 6-TSOP | 0 | 3,000:$0.21750 |
| SI1431DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 30V 1.7A SOT363 | 0 | 3,000:$0.21750 |
| SI5461EDC-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V CHIPFET | 0 | 3,000:$0.83700 |
| SI5459DU-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V CHIPFET | 0 | 3,000:$0.22475 |
| SI3434DV-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 4.6A 6-TSOP | 0 | 3,000:$0.25085 |
| SI4390DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 8.5A 8SOIC | 0 | 2,500:$1.25550 |
| SI8406DB-T2-E1 | Vishay Siliconix | MOSFET N-CH 20V D-S MICROFOOT | 0 | 3,000:$0.21700 6,000:$0.20300 15,000:$0.18900 30,000:$0.17850 75,000:$0.17500 150,000:$0.16800 |
| IRFBC30ASTRLPBF | Vishay Siliconix | MOSFET N-CH 600V 3.6A D2PAK | 0 | 800:$0.83003 |
| SQ2308ES-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO236 | 0 | 3,000:$0.21700 |
| SI4368DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 17A 8-SOIC | 0 | 2,500:$0.82485 |
| SUD50N06-08H-E3 | Vishay Siliconix | MOSFET N-CH D-S 60V TO252 | 0 | 2,000:$1.71570 |
| IRLZ24SPBF | Vishay Siliconix | MOSFET N-CH 60V 17A D2PAK | 0 | 1,000:$0.90045 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 100V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 90A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 19 毫歐 @ 20A，10V |
| Id 時的 Vgs(th)（最大）: | 4.5V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 330nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 12000pF @ 50V |
| 功率 - 最大: | 375W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | TO-263（D2Pak） |
| 包裝: | 帶卷 (TR) |