| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| 2N7002BKM,315 | NXP Semiconductors | MOSFET N-CH 60V 450MA SOT883 | 0 | 10,000:$0.09000 30,000:$0.08200 50,000:$0.07900 100,000:$0.07800 250,000:$0.07600 |
| PSMN4R0-40YS,115 | NXP Semiconductors | MOSFET N-CH 40V 100A LFPAK | 2,540 | 1:$0.93000 10:$0.82600 25:$0.74600 100:$0.65270 250:$0.57240 500:$0.50764 |
| PSMN4R0-40YS,115 | NXP Semiconductors | MOSFET N-CH 40V 100A LFPAK | 1,500 | 1,500:$0.38850 3,000:$0.36260 7,500:$0.34447 10,500:$0.33152 37,500:$0.32116 75,000:$0.31080 |
| PSMN8R5-60YS,115 | NXP Semiconductors | MOSFET N-CH 60V 76A LFPAK | 1,918 | 1:$1.10000 10:$0.97200 25:$0.87760 100:$0.76780 250:$0.67340 500:$0.59722 |
| PSMN8R5-60YS,115 | NXP Semiconductors | MOSFET N-CH 60V 76A LFPAK | 1,918 | 1:$1.10000 10:$0.97200 25:$0.87760 100:$0.76780 250:$0.67340 500:$0.59722 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道,金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 60V |
| 電流 - 連續漏極(Id) @ 25° C: | 450mA |
| 開態Rds(最大)@ Id, Vgs @ 25° C: | 1.6 歐姆 @ 500mA,10V |
| Id 時的 Vgs(th)(最大): | 2.1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 0.6nC @ 4.5V |
| 輸入電容 (Ciss) @ Vds: | 50pF @ 10V |
| 功率 - 最大: | 360mW |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | SC-101,SOT-883 |
| 供應商設備封裝: | SOT-883 |
| 包裝: | 帶卷 (TR) |