| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| PHB66NQ03LT,118 | NXP Semiconductors | MOSFET N-CH 25V 66A SOT404 | 3,416 | 1:$1.35000 10:$1.19600 25:$1.08000 100:$0.94500 250:$0.82876 |
| PSMN069-100YS,115 | NXP Semiconductors | MOSFET N-CH LFPAK | 2,684 | 1:$0.66000 10:$0.58200 25:$0.51440 100:$0.44840 250:$0.39036 500:$0.33228 |
| PSMN069-100YS,115 | NXP Semiconductors | MOSFET N-CH LFPAK | 0 | 1,500:$0.25808 3,000:$0.23389 7,500:$0.21775 10,500:$0.20969 37,500:$0.20163 75,000:$0.19840 150,000:$0.19356 |
| PMK50XP,518 | NXP Semiconductors | MOSFET P-CH FET 20V 7.9A 8-SOIC | 10,000 | 1:$0.66000 10:$0.57800 25:$0.51040 100:$0.44480 250:$0.38720 500:$0.32960 1,000:$0.26400 |
| PMK50XP,518 | NXP Semiconductors | MOSFET P-CH FET 20V 7.9A 8-SOIC | 10,000 | 1:$0.66000 10:$0.57800 25:$0.51040 100:$0.44480 250:$0.38720 500:$0.32960 1,000:$0.26400 |
| 類(lèi)別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門(mén) |
| 漏極至源極電壓(Vdss): | 25V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 66A |
| 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 10.5 毫歐 @ 25A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 2V @ 1mA |
| 閘電荷(Qg) @ Vgs: | 12nC @ 5V |
| 輸入電容 (Ciss) @ Vds: | 860pF @ 25V |
| 功率 - 最大: | 93W |
| 安裝類(lèi)型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | D2PAK |
| 包裝: | 剪切帶 (CT) |