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分離式半導(dǎo)體產(chǎn)品 SI7858BDP-T1-GE3品牌、價(jià)格、PDF參數(shù)

SI7858BDP-T1-GE3 • 品牌、價(jià)格
元器件型號(hào) 廠商 描述 數(shù)量 價(jià)格
SI7858BDP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 40A 8SOIC 2,823 1:$1.82000
25:$1.44000
100:$1.29600
250:$1.12800
500:$1.00800
1,000:$0.79200
SI7858BDP-T1-GE3 Vishay Siliconix MOSFET N-CH 12V 40A 8SOIC 0 3,000:$0.67200
6,000:$0.63840
15,000:$0.61200
30,000:$0.59520
75,000:$0.57600
SI4136DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V 8-SOIC 2,090 1:$1.79000
25:$1.41000
100:$1.26900
250:$1.10452
500:$0.98700
1,000:$0.77550
SI4136DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V 8-SOIC 2,090 1:$1.79000
25:$1.41000
100:$1.26900
250:$1.10452
500:$0.98700
1,000:$0.77550
SI4136DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 20V 8-SOIC 0 2,500:$0.65800
5,000:$0.62510
12,500:$0.59925
25,000:$0.58280
SI7615DN-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 1212-8 2,750 1:$1.79000
25:$1.41000
100:$1.26900
250:$1.10452
500:$0.98700
1,000:$0.77550
SI7615DN-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 1212-8 2,750 1:$1.79000
25:$1.41000
100:$1.26900
250:$1.10452
500:$0.98700
1,000:$0.77550
SI7615DN-T1-GE3 Vishay Siliconix MOSFET P-CH D-S 20V 1212-8 0 3,000:$0.65800
6,000:$0.62510
15,000:$0.59925
30,000:$0.58280
SI7858BDP-T1-GE3 • PDF參數(shù)
類別: 分離式半導(dǎo)體產(chǎn)品
FET 型: MOSFET N 通道，金屬氧化物
FET 特點(diǎn): 標(biāo)準(zhǔn)
漏極至源極電壓(Vdss): 12V
電流 - 連續(xù)漏極(Id) @ 25° C: 40A
開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C: 2.5 毫歐 @ 15A，4.5V
Id 時(shí)的 Vgs(th)（最大）: 1V @ 250µA
閘電荷(Qg) @ Vgs: 84nC @ 4.5V
輸入電容 (Ciss) @ Vds: 5760pF @ 6V
功率 - 最大: 48W
安裝類型: 表面貼裝
封裝/外殼: PowerPAK? SO-8
供應(yīng)商設(shè)備封裝: PowerPAK? SO-8
包裝: 剪切帶 (CT)