| 元器件型號(hào) | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| SI3477DV-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 12V 6-TSOP | 3,837 | 1:$0.84000 25:$0.64600 100:$0.57000 250:$0.49400 500:$0.41800 1,000:$0.33250 |
| SIA433EDJ-T1-GE3 | Vishay Siliconix | MOSFET P-CH D-S 20V SC-70-6 | 5,927 | 1:$0.79000 25:$0.61200 100:$0.54000 250:$0.46800 500:$0.39600 1,000:$0.31500 |
| SI1499DH-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V SC-70-6 | 6,000 | 3,000:$0.24650 6,000:$0.22950 15,000:$0.22100 30,000:$0.21250 75,000:$0.20910 150,000:$0.20400 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET P 通道，金屬氧化物 |
| FET 特點(diǎn): | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 12V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 8A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 17.5 毫歐 @ 9A，4.5V |
| Id 時(shí)的 Vgs(th)（最大）: | 1V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 90nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2600pF @ 6V |
| 功率 - 最大: | 4.2W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | 6-TSOP（0.065"，1.65mm 寬） |
| 供應(yīng)商設(shè)備封裝: | 6-TSOP |
| 包裝: | 剪切帶 (CT) |