| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價(jià)格 |
|---|---|---|---|---|
| STB26NM60N | STMicroelectronics | MOSFET N-CH 600V 20A D2PAK | 1,000 | 1,000:$3.23400 2,000:$3.07230 5,000:$2.95680 10,000:$2.86440 25,000:$2.77200 |
| STL18NM60N | STMicroelectronics | MOSFET N-CH 600V 6A POWERFLAT | 3,000 | 1:$3.92000 10:$3.50900 25:$3.15520 100:$2.86960 250:$2.59760 500:$2.32560 1,000:$1.95840 |
| STP18N55M5 | STMicroelectronics | MOSFET N-CH 550V 13A TO220AB | 915 | 1:$3.22000 10:$2.87500 25:$2.58760 100:$2.35750 250:$2.12752 500:$1.90900 1,000:$1.61000 2,500:$1.52950 5,000:$1.47200 |
| STL18NM60N | STMicroelectronics | MOSFET N-CH 600V 6A POWERFLAT | 0 | 3,000:$1.80880 6,000:$1.74080 15,000:$1.68640 30,000:$1.63200 |
| 類別: | 分離式半導(dǎo)體產(chǎn)品 |
|---|---|
| FET 型: | MOSFET N 通道，金屬氧化物 |
| FET 特點(diǎn): | 標(biāo)準(zhǔn) |
| 漏極至源極電壓(Vdss): | 600V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 20A |
| 開態(tài)Rds（最大）@ Id, Vgs @ 25° C: | 165 毫歐 @ 10A，10V |
| Id 時(shí)的 Vgs(th)（最大）: | 4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 60nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 1800pF @ 50V |
| 功率 - 最大: | 140W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | TO-263-3，D²Pak（2 引線+接片），TO-263AB |
| 供應(yīng)商設(shè)備封裝: | D2PAK |
| 包裝: | 帶卷 (TR) |