| 元器件型號 | 廠商 | 描述 | 數(shù)量 | 價格 |
|---|---|---|---|---|
| SIR826DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 60A POWERPAK | 83 | 1:$3.33000 25:$2.56520 100:$2.32750 250:$2.09000 500:$1.80500 1,000:$1.52000 |
| SIR826DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 60A POWERPAK | 83 | 1:$3.33000 25:$2.56520 100:$2.32750 250:$2.09000 500:$1.80500 1,000:$1.52000 |
| SIR826DP-T1-GE3 | Vishay Siliconix | MOSFET N-CH 80V 60A POWERPAK | 0 | 3,000:$1.28250 6,000:$1.23500 15,000:$1.18750 30,000:$1.16375 75,000:$1.14000 |
| SIE822DF-T1-GE3 | Vishay Siliconix | MOSFET N-CH D-S 20V POLARPAK | 750 | 1:$3.33000 25:$2.56520 100:$2.32750 250:$2.09000 500:$1.80500 1,000:$1.52000 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道,金屬氧化物 |
| FET 特點: | 邏輯電平門 |
| 漏極至源極電壓(Vdss): | 80V |
| 電流 - 連續(xù)漏極(Id) @ 25° C: | 60A |
| 開態(tài)Rds(最大)@ Id, Vgs @ 25° C: | 4.8 毫歐 @ 20A,10V |
| Id 時的 Vgs(th)(最大): | 2.8V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 90nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 2900pF @ 40V |
| 功率 - 最大: | 104W |
| 安裝類型: | 表面貼裝 |
| 封裝/外殼: | PowerPAK? SO-8 |
| 供應商設備封裝: | PowerPAK? SO-8 |
| 包裝: | Digi-Reel® |