| 元器件型號 | 廠商 | 描述 | 數量 | 價格 |
|---|---|---|---|---|
| SIHP12N60E-E3 | Vishay Siliconix | MOSFET N-CH 600V 12A TO220AB | 983 | 1:$2.70000 25:$2.17520 100:$1.95750 250:$1.74000 500:$1.52250 1,000:$1.26150 2,500:$1.17450 5,000:$1.13100 |
| SI8800EDB-T2-E1 | Vishay Siliconix | MOSFET N-CH D-S 20V MICROFOOT | 14,878 | 1:$0.56000 25:$0.38880 100:$0.33330 250:$0.28784 500:$0.24746 1,000:$0.19190 |
| SI8800EDB-T2-E1 | Vishay Siliconix | MOSFET N-CH D-S 20V MICROFOOT | 14,878 | 1:$0.56000 25:$0.38880 100:$0.33330 250:$0.28784 500:$0.24746 1,000:$0.19190 |
| SI8800EDB-T2-E1 | Vishay Siliconix | MOSFET N-CH D-S 20V MICROFOOT | 12,000 | 3,000:$0.15655 6,000:$0.14645 15,000:$0.13635 30,000:$0.12878 75,000:$0.12625 150,000:$0.12120 |
| 類別: | 分離式半導體產品 |
|---|---|
| FET 型: | MOSFET N 通道,金屬氧化物 |
| FET 特點: | 標準 |
| 漏極至源極電壓(Vdss): | 600V |
| 電流 - 連續漏極(Id) @ 25° C: | 12A |
| 開態Rds(最大)@ Id, Vgs @ 25° C: | 380 毫歐 @ 6A,10V |
| Id 時的 Vgs(th)(最大): | 4V @ 250µA |
| 閘電荷(Qg) @ Vgs: | 58nC @ 10V |
| 輸入電容 (Ciss) @ Vds: | 937pF @ 100V |
| 功率 - 最大: | 147W |
| 安裝類型: | 通孔 |
| 封裝/外殼: | TO-220-3 整包 |
| 供應商設備封裝: | TO-220AB |
| 包裝: | 散裝 |