bat54 series

schottky barrier (double) diodes

product specification 2002 mar 04
supersedes data of 2001 oct 12

philips semiconductors product specification

schottky barrier (double) diodes bat54 series

features pinning

· low forward voltage
· guard ring protected
· small plastic smd package.
applications

· ultra high-speed switching
· voltage clamping
· protection circuits
· blocking diodes.
description

planar schottky barrier diodes encapsulated in a sot23
small plastic smd package. single diodes and double
diodes with different pinning are available.

marking

type number marking code(1)
bat54 l4*
bat54a l42 or *v3
bat54c l43 or *w1
bat54s l44 or *v4

note

1. * = p : made in hong kong.
* = t : made in malaysia.
* = w: made in china.
pin
1
2
3
a
n.c.
k
description
bat54 bat54a
k1
k2
a1,a2
bat54c
a1
a2
k1,k2
bat54s
a1
k2
k1,a2
fig.1
21
3
mgc421top view
simplified outline (sot23) and pin
configuration.
1
1
(1)
(3)
3
1 2
mlc360
3
2
mlc359
3
1 2
mlc358
fig.2 diode configuration and symbol.
3
2
n.c.
mlc357
bat54 (2) bat54a
bat54c (4) bat54s

2002 mar 04 2

philips semiconductors product specification

schottky barrier (double) diodes bat54 series

limiting values

in accordance with the absolute maximum rating system (iec 60134).

symbol parameter conditions min. max. unit
per diode
vr continuous reverse voltage - 30 v
if continuous forward current - 200 ma
ifrm repetitive peak forward current tp ￡1s; d￡0.5 - 300 ma
ifsm non-repetitive peak forward current tp <10ms - 600 ma
tstg storage temperature -65 +150 °c
tj junction temperature - 125 °c
per device
ptot total power dissipation tamb ￡25 °c - 230 mw

thermal characteristics

symbol parameter conditions value unit
rth j-a thermal resistance from junction to
ambient
note 1 500 k/w

note

1. refer to sot23 standard mounting conditions.
characteristics

tamb =25 °c unless otherwise specified.

symbol parameter conditions max. unit
per diode
vf forward voltage see fig.3
if = 0.1 ma
if = 1 ma
if = 10 ma
if = 30 ma
if = 100 ma
240
320
400
500
800
mv
mv
mv
mv
mv
ir reverse current vr = 25 v; see fig.4 2 ma
trr reverse recovery time when switched from if =10ma
to ir = 10 ma; rl = 100 w;
measured at ir = 1 ma;
see fig.6
5 ns
cd diode capacitance f = 1 mhz; vr = 1 v; see fig.5 10 pf

2002 mar 04 3

philips semiconductors product specification

schottky barrier (double) diodes bat54 series

10
if
vf (v)
3
10
(ma)
2
10
1
10 1
1.20.80.40
msa892
(3)(2)(1)
(3)(2)(1)
(1) tamb = 125 °c.
(2) tamb =85 °c.
(3) tamb =25 °c.
fig.3 forward current as a function of forward
voltage; typical values.
0 10 20 30
v (v)r
10 3
ir
(ma)
10 2
10
1
10 1
(1)
(2)
(3)
msa893
(1) tamb = 125 °c.
(2) tamb =85 °c.
(3) tamb =25 °c.
fig.4 reverse current as a function of reverse
voltage; typical values.
0 10 20 30
0
5
10
15
vr (v)
cd
(pf)
msa891
fig.5 diode capacitance as a function of reverse
voltage; typical values.
f = 1 mhz; tamb =25 °c.
fig.6 reverse recovery definitions.
if
ir
90%
10%
tf
q
di
dt
t
mrc129 - 1
f
r