| 品牌 | 進口 | 型號 | 100-8 |
| 應用范圍 | 功率 | 功率特性 | 大功率 |
| 頻率特性 | 超高頻 | 極性 | npn型 |
| 結構 | 平面型 | 材料 | 硅(si) |
| 封裝形式 | 直插型 | 封裝材料 | 塑料封裝 |
| 特征頻率 | 1（mhz） | 集電極允許電流 | 2（a） |
| 集電極最大允許耗散功率 | 1（w） | 營銷方式 | 直銷 |
| 產品性質 | 新品 |
symbol | parameter | condition | value | units |
| vdrm | repetitive peak off-state voltage | 400 | v | |
| it(av) | average on-state current | half sine wave:tc=74℃ | 0.5 | a |
| it(rms) | r.m.s on-state current | all conduction angle | 0.8 | a |
| itsm | surge on-state current | 1/2cycle,60hz,sine wave non-repetitive | 10 | a |
| i2t | i2t for fusing | t=8.3ms | 0.415 | a2s |
| pgm | forward peak gate power dissipation | 2 | w | |
| pg(av) | forward average gate power dissipation | 0.1 | w | |
| ifgm | forward peak gate current | 1 | a | |
| vrgm | reverse peak gate voltage | 5.0 | v | |
| tj | operating junction temperature | -40～150 | ℃ | |
| tstg | storage temperature | -40～150 |