tamb=25 unless otherwise specified
parameter symbol test conditions min typ max unit
collector-base breakdown voltage v(br)cbo ic= 1000 a ie=0 700 v
collector-emitter breakdown voltage v(br)ceo ic= 10 ma ib=0 400 v
emitter-base breakdown voltage v(br)ebo ie= 1000 a ic=0 9 v
collector cut-off current icbo vcb= 700 v ie=0 1000 μa
collector cut-off current iceo vce= 400 v ib=0 500 μa
emitter cut-off current iebo veb= 9 v ic=0 1000 μa
hfe 1 vce= 10 v, ic= 150 ma 8 40
dc current gain(note)
hfe 2 vce= 10 v, ic= 0.5 ma 5
collector-emitter saturation voltage vce(sat) ic=1000ma,ib= 250 ma 1 v
base-emitter saturation voltage vbe(sat) ic=1000ma, ib= 250ma 1.2 v
base-emitter voltage vbe ie= 2000 ma 3 v
transition frequency ft
vce=10v,ic=100ma
f =1mhz 5 mhz
fall time tf 0.5 μs
storage time ts
ic=1a, ib1=-ib2=0.2a
vcc=100v 2.5 μs