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分離式半導體產品 SI5906DU-T1-GE3品牌、價格、PDF參數

SI5906DU-T1-GE3 • 品牌、價格
元器件型號 廠商 描述 數量 價格
SI5906DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PPAK FET 0 1:$0.77000
25:$0.59520
100:$0.52500
250:$0.45500
500:$0.38500
1,000:$0.30625
SI5906DU-T1-GE3 Vishay Siliconix MOSFET 2N-CH 30V 6A PPAK FET 0 3,000:$0.25375
6,000:$0.23625
15,000:$0.22750
30,000:$0.21875
SI4214DY-T1-GE3 Vishay Siliconix MOSFET N-CH D-S 30V 8-SOIC 0 2,500:$0.25375
SI3529DV-T1-GE3 Vishay Siliconix MOSFET N/P-CH 40V 6-TSOP 0 3,000:$0.21750
SI3529DV-T1-E3 Vishay Siliconix MOSFET N/P-CH 40V 6-TSOP 0 3,000:$0.21750
SI1970DH-T1-GE3 Vishay Siliconix MOSFET N-CH DUAL 30V SC70-6 0 3,000:$0.21750
SI1988DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V DUAL SC-70-6 0 1:$0.66000
25:$0.51000
100:$0.45000
250:$0.39000
500:$0.33000
1,000:$0.26250
SI1988DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V DUAL SC-70-6 0 1:$0.66000
25:$0.51000
100:$0.45000
250:$0.39000
500:$0.33000
1,000:$0.26250
SI1988DH-T1-GE3 Vishay Siliconix MOSFET N-CH 20V DUAL SC-70-6 0 3,000:$0.21750
6,000:$0.20250
15,000:$0.19500
30,000:$0.18750
75,000:$0.18450
150,000:$0.18000
SI5906DU-T1-GE3 • PDF參數
類別: 分離式半導體產品
FET 型: 2 個 N 溝道（雙）
FET 特點: 邏輯電平門
漏極至源極電壓(Vdss): 30V
電流 - 連續漏極(Id) @ 25° C: 6A
開態Rds（最大）@ Id, Vgs @ 25° C: 31 毫歐 @ 4.8A，10V
Id 時的 Vgs(th)（最大）: 2.2V @ 250µA
閘電荷(Qg) @ Vgs: 8.6nC @ 10V
輸入電容 (Ciss) @ Vds: 300pF @ 15V
功率 - 最大: 10.4W
安裝類型: 表面貼裝
封裝/外殼: PowerPAK? CHIPFET? 雙
供應商設備封裝: PowerPAK? ChipFet 雙
包裝: 剪切帶 (CT)