| 品牌 | nec | 型號 | 2sc3356 2sc3356-t1b marking 記號 r24/r25 |
| 應用范圍 | 放大 | 功率特性 | 中功率 |
| 頻率特性 | 高頻 | 極性 | npn型 |
| 材料 | 硅(si) | 封裝形式 | 貼片型 |
| 封裝材料 | 塑料封裝 | 特征頻率 | 7ghz 7000（mhz） |
| 集電極允許電流 | 0.1（a） | 集電極最大允許耗散功率 | 0.2（w） |
| 營銷方式 | 現貨 | 產品性質 | 熱銷 |
description
the 2sc3356 is an npn silicon epitaxial transistor designed for low
noise amplifier at vhf, uhf and catv band.
it has dynamic range and good current characteristic.
features
• low noise and high gain
nf = 1.1 db typ., ga = 11 db typ. @vce = 10 v, ic = 7 ma, f = 1.0 ghz
• high power gain
mag = 13 db typ. @vce = 10 v, ic = 20 ma, f = 1.0 ghz
absolute maximum ratings (ta = 25 c)
collector to base voltage vcbo 20 v
collector to emitter voltage vceo 12 v
emitter to base voltage vebo 3.0 v
collector current ic 100 ma
total power dissipation pt 200 mw
junction temperature tj 150 c
storage temperature tstg 65 to +150 c
hfe 50 to 100 80 to 160 125 to 250