•

amplifier and general purpose applications.

 

 

 

2sc1815 is npn silicon epitaxial transistor designed for rf, af

•

 

 

 

capable of 0.4watts of power dissipation.

•

 

 

 

collector-current 0.15a

•

 

 

 

collector-base voltage 60v

•

 

 

marking : c1815

x

classification rating 94v-0

 

 

 

case material: molded plastic. ul flammabilityand msl rating 1

 

electrical characteristics @ 25

oc unless otherwise specified

symbol parameter min max units

off characteristics

v

(i

50 vdc

v

(i

60 vdc

v

(i

1.45 vdc

i

(v

0.1 uadc

i

(v

0.1 uadc

i

(v

0.1 uadc

(br)ceocollector-emitter breakdown voltage*c=0.1madc, ib=0)(br)cbocollector-base breakdown voltagec=100uadc, ie=0)befemitter-base voltagee=310madc)cbocollector cutoff currentcb=60vdc, ie=0adc)ceocollector cutoff currentcb=50vdc, ie=0adc)eboemitter cutoff currenteb=5.0vdc, ic=0adc)

on characteristics

h

(i

v

(i

v

(i

fe(1)dc current gain*c=2.0madc, vce=6.0vdc) 70 700ce(sat)collector-emitter saturation voltagec=100madc, ib=10madc) 0.25 vdcbe(sat)base-emitter saturation voltagec=100madc, ib=10madc) 1.0 vdc

small-signal characteristics

f

(i

ttransistor frequencyc=1.0madc, vce=10vdc, f=30mhz) 80 mhz

classification of h

fe (1)

rank o y gr bl

range 70-140 120-240 200-400 350-700

 

 

 

 

pac components (hk) pte limited        kevin.li/李鴻文

hp: (86) 13631668403               qq:937632166

tel: (0755) 83038649                 fax: (0755) 83038749
email:kevin.li@paccom.net               msn:hongwenli@msn.cn    
website:http://www.paccom.com.sg              skype:kevin.king84
深圳辦事處地址:room 1222 ,top office glitstery gity,  no.3027 shennan rd central, shenzhen /深圳福田區深南中路3027號嘉匯新城匯商中心1222

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