各類直插三極管  貼片三極管，歡迎各個前來洽談

s8050 ss8050

s8550  ss8550

9012  9013  9014  9015  9018 

3904  3906 

2907  2222

 型號繁多，未能全寫

mps2907 transistor (pnp)
features
complementary npn type available (mps2222)
maximum ratings (ta=25℃ unless otherwise noted)
symbol parameter value units
vcbo collector-base voltage -60 v
vceo collector-emitter voltage -40 v
vebo emitter-base voltage -5 v
ic collector current -continuous -0.6 a
pc collector power dissipation 0.625 w
tj junction temperature 150 ℃
tstg storage temperature -55-150 ℃
electrical characteristics (tamb=25℃ unless otherwise specified)
parameter symbol test conditions min typ max unit
collector-base breakdown voltage v(br)cbo ic=-10μa,ie=0 -60 v
collector-emitter breakdown voltage v(br)ceo ic=-10ma,ib=0 -40 v
emitter-base breakdown voltage v(br)ebo ie=-10μa,ic=0 -5 v
collector cut-off current icbo vcb=-50v,ie=0 -10 n a
collector cut-off current icex vce=-30v,veb(off)=-0.5v -50 na
emitter cut-off current iebo veb=-3v,ic=0 -10 na
hfe(1) vce=-10v,ic=-0.1ma 52
dc current gain hfe(2) vce=-10v,ic=-150ma 100 300
hfe(3) vce=-10v,ic=-500ma 32
vce(sat) ic=-150ma,ib=-15ma -0.4 v
collector-emitter saturation voltage
vce(sat) ic=-500ma,ib=-50ma -0.67 v
vbe(sat) ic=-150ma,ib=-15ma -1 v
base-emitter saturation voltage
vbe(sat) ic=-500ma,ib=-50ma -1.2 v
transition frequency ft vce=-20v,ic=-50ma,f=100mhz 200 mhz
delay time td 10 ns
rise time tr
vcc=-30v,ic=-150ma,ib1=-15ma
25 ns
storage time ts 225 ns
fall time tf
vcc=-6v,ic=-150ma,
ib1=ib2=-15ma 60 ns
classification of hfe(2)
rank l h
range 100-200 200-300