| 品牌 | 華晶 | 型號 | cs12n60a8hd |
| 種類 | 絕緣柵(mosfet) | 溝道類型 | n溝道 |
| 導電方式 | 耗盡型 | 封裝外形 | smd(so)/表面封裝 |
| 材料 | n-fet硅n溝道 | 開啟電壓 | 600（v） |
| 夾斷電壓 | 30（v） | 最大漏極電流 | 12a（ma） |
| 最大耗散功率 | 140（mw） |
general description：
vdss 600 v
id 12 a
pd (tc=25℃) 140 w
rds(on) 0.55 ω
cs12n60a8hd, the silicon n-channel enhanced
vdmosfets, is obtained by the self-aligned planar
technology which reduce the conduction loss, improve
switching performance and enhance the avalanche energy. the
transistor can be used in various power switching circuit for
system miniaturization and higher efficiency. the package form is
to-220ab, which accords with the rohs standard.
features：
z fast switching
z esd improved capability
z low gate charge (typical data:58nc)
z low reverse transfer capacitances(typical:90pf)
z 100% single pulse avalanche energy test