830 nm high-power laser diode (al830t) 

features:

output power: 1w(cw)
variety of stripe width
efficient quantum well structure
to package or c-mount package

application:

solid-state laser pumping
medical usage
beacons and iiiumination
free-space communication
infrared light sources

parameter

value

al830t1000

cw output power (mw)

500

peak wavelength (nm)

830±10

spectral width (nm)

≤5

threshold current (a)

≤0.45

operating current (a)

≤1.2

operating voltage (v)

≤2.2

slope efficiency (w/a)

≥1

beam divergence θ_⊥×θ_∥(deg.)

≤38×12

wavelength temperature coefficient (nm/℃)

0.3

emitting area (μm)

50×1

serial resistance (ω)

≤1.5

polarization mode

te

package

to-5, to-3, c-mount