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參數資料
| 型號： | 03906GPF |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifier; Package: TO-65; IT (Av) (A): 40; VTM (V): 1.8; IH (mA): 500; VGT (V): 3; IGT (µA): 150000; tq (nsec): 15000; Vrrm (V): 600; |
| 中文描述： | 62.8 A, SCR, TO-65 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 79K |
| 代理商： | 03906GPF |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
SILICON CONTROLLED RECTIFIER / INVERTER
dv / dt – 200 V / usec
Blocking voltages up to 600V
1000 Amperes surge current
Primarily for forced commutated
Low forward on-state voltage
applications
T4-LDS-0166 Rev. 1 (100696)
Page 1 of 4
DEVICES
LEVELS
03902GPF
03904GPF
03906GPF
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value
Unit
Repetitive Forward Voltage
03902GPF
03904GPF
03906GPF
VDRM
200
400
600
V
Repetitive Reverse Voltage
03902GPF
03904GPF
03906GPF
VRRM
200
400
600
V
Reverse Transient Blocking Voltage
03902GPF
03904GPF
03906GPF
VRSM
300 min
500 min
700 min
V
Thermal Resistance, Junction to Case
RθJC
0.35
°C/W
Typical Thermal Resistance (greased)
RθCS
0.20
°C/W
Mounting Torque
25 - 30
inch
pounds
Weight
0.56
oz
Operating Junction Temperature Range
TJ
-65°C to 125°C
°C
Storage Temperature Range
Tstg
-65°C to 155°C
°C
NOTE:
To specify dv/dt other than 200V/usec., enter appropriate letter in place of “G”:
K 300V/
μsec., H 500V/μsec
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
RMS On-State Current
TC = 105°C, RθJC = 0.35° C/W
IT(RMS)
63
A
Average On-State Current
TC = 105°C, RθJC = 0.35° C/W
IT(AV)
40
A
Peak on-state Voltage
ITM = 120A
VTM
1.8
V
Holding Current
IH
500
mA
Peak One Cycle Surge Current
TC = 105°C, 60Hz
ITSM
1000
A
I
2t capability for Fusing
t = 8.3ms
I
2t
4150
A
2S
TO-208A (TO-65)
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