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參數資料
| 型號： | 1PMT12AT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Zener Transient Voltage Suppressor POWERMITE Package |
| 中文描述： | 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA |
| 封裝： | PLASTIC, CASE 457-04, POWERMITE, 2 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 57K |
| 代理商： | 1PMT12AT3 |
Semiconductor Components Industries, LLC, 2004
April, 2004 Rev. 7
1
Publication Order Number:
1PMT5.0AT3/D
1PMT5.0AT1/T3 Series
Zener Transient
Voltage Suppressor
POWERMITE
Package
The 1PMT5.0AT1/T3 Series is designed to protect voltage
sensitive components from high voltage, high energy transients.
Excellent clamping capability, high surge capability, low zener
impedance and fast response time. The advanced packaging
technique provides for a highly efficient micro miniature, space
saving surface mount with its unique heat sink design. The
POWERMITE has the same thermal performance as the SMA while
being 50% smaller in footprint area, and delivering one of the lowest
height profiles (1.1 mm) in the industry. Because of its small size, it is
ideal for use in cellular phones, portable devices, business machines,
power supplies and many other industrial/consumer applications.
Specification Features:
Standoff Voltage: 5 58 V
Peak Power 200 W @ 1 ms (1PMT5.0A 1PMT36A)
175 W @ 1 ms (1PMT40A 1PMT58A)
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Low Profile Maximum Height of 1.1 mm
Integral Heat Sink/Locking Tabs
Full Metallic Bottom Eliminates Flux Entrapment
Small Footprint Footprint Area of 8.45 mm
2
POWERMITE is JEDEC Registered as DO216AA
Cathode Indicated by Polarity Band
PbFree Package is Available
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MOUNTING POSITION:
Any
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°
C for 10 Seconds
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5 58 V
200 W PEAK POWER
Device
Package
Shipping
ORDERING INFORMATION
1PMT5.0AT1
POWERMITE
3,000/Tape & Reel
POWERMITE
CASE 457
PLASTIC
1
2
1: CATHODE
2: ANODE
1
2
LEAD ORIENTATION IN TAPE:
Cathode (Short) Lead to Sprocket Holes
Mxx
xx
= Specific Device Code
= 5 58
=
(See Table Next Page)
= Date Code
D
MARKING DIAGRAM
MxxD
1
CATHODE
2
ANODE
1PMT5.0AT3
POWERMITE 12,000/Tape & Reel
http://onsemi.com
1PMT5.0AT3G
POWERMITE
(PbFree)
12,000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 1PMT12AT3G | 功能描述:TVS 二極管 - 瞬態電壓抑制器 12V 200W Powermite Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1PMT16AT1 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 16V 200W Powermite RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1PMT16AT1G | 功能描述:TVS 二極管 - 瞬態電壓抑制器 16V 200W Powermite Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1PMT16AT3 | 功能描述:TVS 二極管 - 瞬態電壓抑制器 16V 200W Powermite RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| 1PMT16AT3G | 功能描述:TVS 二極管 - 瞬態電壓抑制器 16V 200W Powermite Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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