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參數資料
| 型號： | 1SV257 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Variable Capacitance Diode Silicon Epitaxial Planar Type(變容硅外延平面型二極管（用于UHF波段無線電臺）) |
| 中文描述： | 變容二極管外延硅平面型（變容硅外延平面型二極管（用于超高頻波段無線電臺）） |
| 文件頁數： | 1/2頁 |
| 文件大小： | 269K |
| 代理商： | 1SV257 |
TOSHIBA
TOSHIBA CORPORATION
1/2
Discrete Semiconductors
1SV257
Variable Capacitance Diode
Silicon Epitaxial Planar Type
VCO For UHF Ratio
Features
Ultra Low Series Resistance : r
Useful for Small Size Set
s
= 0.2
(Typ.)
Absolute Maximum Ratings (Ta = 25
°
C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
15
V
Junction Temperature
T
j
125
°
C
Storage Temperature Range
T
stg
-55 ~ 125
°
C
Electrical Characteristics (Ta = 25
°
C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
= 1
μ
A
15
–
–
V
Reverse Current
I
R
V
R
= 15V
–
–
3
nA
Capacitance
C2V
V
R
= 2V, f = 1MHz
14
15
16
pF
Capacitance
C10V
V
R
= 10V, f = 1MHz
5.5
6
6.5
pF
Capacitance Ratio
C2V/C10V
–
2.0
2.5
–
–
Series Resistance
r
s
V
R
= 5V, f = 470MHz
–
0.2
0.4
Marking
Unit in mm
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