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參數(shù)資料
| 型號： | 2N3227UB |
| 廠商： | Semicoa Semiconductor |
| 英文描述： | Silicon NPN Transistor |
| 中文描述： | 硅NPN晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 241K |
| 代理商： | 2N3227UB |
Copyright
2002
Rev. J
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
www.
SEMICOA
.com
Page 1 of 1
2N3227UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
Screening and processing per MIL-PRF-19500
Appendix E
JAN level (2N3227UBJ)
JANTX level (2N3227UBJX)
JANTXV level (2N3227UBJV)
JANS level (2N3227UBJS)
QCI to the applicable level
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.
SEMICOA
.com or (714) 979-1900
Applications
High-speed switching transistor
Low power
NPN silicon transistor
Features
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0005
Reference document:
MIL-PRF-19500/317
Benefits
Qualification Levels: JAN, JANTX,
JANTXV and JANS
Radiation testing available
Absolute Maximum Ratings
T
C
= 25
°
C unless otherwise specified
Rating
20
40
Parameter
Symbol
V
CEO
V
CBO
Unit
Volts
Volts
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Power Dissipation, T
A
= 25
°
C
Derate linearly above 70
°
C
Thermal Resistance
V
EBO
6
Volts
P
T
0.4
3.08
mW
mW/
°
C
°
C/W
R
θ
JA
325
Operating Junction Temperature
T
J
-65 to +200
°
C
Storage Temperature
T
STG
-65 to +200
°
C
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