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參數資料
| 型號： | 2N3906 |
| 廠商： | AMERICAN MICROSEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 263K |
| 代理商： | 2N3906 |
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2N3906 Information
Category Transistors
Class Transistors; Bipolar; Si PNP Low-Pwr HF
Type Bipolar; Si PNP Low-Power High Frequency
2N3906 Specifications
Military/High-Rel : N
V(BR)CEO (V) : 40
V(BR)CBO (V) : 40
I(C) Max. (A) : 200m
Absolute Max. Power Diss. (W) : 350m
Maximum Operating Temp (шC) : 150х
I(CBO) Max. (A) : 50nч
@V(CBO) (V) (Test Condition) : 30
h(FE) Min. Current gain. : 100
h(FE) Max. Current gain. : 300
@I(C) (A) (Test Condition) : 10m
@V(CE) (V) (Test Condition) : 1.0
f(T) Min. (Hz) Transition Freq : 250M
@I(C) (A) (Test Condition) : 10m
@V(CE) (V) (Test Condition) : 20
V(CE)sat Max. (V) : .40
@I(C) (A) (Test Condition) : 50m
@I(B) (A) (Test Condition) : 5.0m
h(fe) Min. SS Current gain. : 2.5
@I(C) (A) (Test Condition) : 10m
@V(CE) (V) (Test Condition) : 20
@Freq. (Hz) (Test Condition) : 100M
t(d) Max. (s) Delay time. : 35n
t(r) Max. (s) Rise time : 35n
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2N3906 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio...
http://www.americanmicrosemi.com/information/spec/?ss_pn=2N3906
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11/7/2009 2:04 AM
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N3906 GE84-87 | 制造商:GE 功能描述:2N3906 |
| 2N3906 N | 制造商:N 功能描述:2N3906 |
| 2N3906 PBFREE | 制造商:Central Semiconductor Corp 功能描述: |
| 2N3906(TE2,T) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT PNP 40V 0.2A 3-Pin TO-92 T/R |
| 2N3906,116 | 功能描述:TRANS PNP SW HS 200MA 40V TO92 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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