
JFET Switching
N–Channel — Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
25
Vdc
Drain–Gate Voltage
VDG
25
Vdc
Gate–Source Voltage
VGS
25
Vdc
Forward Gate Current
IGF
10
mAdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
350
2.8
mW
mW/
°C
Junction Temperature Range
TJ
–65 to +150
°C
Storage Temperature Range
Tstg
–65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage (IG = 10 Adc, VDS = 0)
V(BR)GSS
25
—
Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
IGSS
—
1.0
nAdc
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V)
Drain Cutoff Current (VDS = 12 Vdc, VGS = –10 V, TA = 100°C)
ID(off)
—
10
2.0
nAdc
Adc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0)
IDSS
15
—
mAdc
Gate–Source Forward Voltage
(IG(f) = 1.0 mAdc, VDS = 0)
VGS(f)
—
1.0
Vdc
Drain–Source On–Voltage
(ID = 7.0 mAdc, VGS = 0)
VDS(on)
—
1.5
Vdc
Static Drain–Source On Resistance
(ID = 0.1 mAdc, VGS = 0)
rDS(on)
—
150
Ohms
1. Pulse Test: Pulse Width < 300
s, Duty Cycle < 3.0%.
SMALL–SIGNAL CHARACTERISTICS
Small–Signal Drain–Source “ON” Resistance
(VGS = 0, ID = 0, f = 1.0 kHz)
rds(on)
—
150
Ohms
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
—
5.0
pF
Reverse Transfer Capacitance
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
Crss
—
1.2
pF
SWITCHING CHARACTERISTICS
Turn–On Delay Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
V
0V
10 Vd ) (S
Fi
1)
td(on)
—
5.0
ns
Rise Time
( DD
, D(on)
,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
tr
—
5.0
ns
Turn–Off Delay Time
(VDD = 10 Vdc, ID(on) = 7.0 mAdc,
V
0V
10 Vd ) (S
Fi
1)
td(off)
—
15
ns
Fall Time
( DD
, D(on)
,
VGS(on) = 0, VGS(off) = –10 Vdc) (See Figure 1)
tf
—
10
ns
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 2
85
Publication Order Number:
2N5555/D
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
1
2
3
2N5555
1 DRAIN
2 SOURCE
3
GATE