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參數資料
| 型號： | 2N6263 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power Transistors |
| 中文描述： | 3 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-66 |
| 封裝： | TO-66, 2 PIN |
| 文件頁數： | 1/1頁 |
| 文件大小： | 11K |
| 代理商： | 2N6263 |
2N6263
Bipolar NPN Device.
V
CEO
= 120V
I
C
= 3A
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
CEO
*
120
V
I
C(CONT)
3
A
h
FE
@ 4/0.5 (V
CE
/ I
C
)
20
100
-
f
t
2M
Hz
P
D
20
W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact
sales@semelab.co.uk
.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Generated
1-Aug-02
TO66 (TO213AA)
PINOUTS
1 – Base
2 – Emitter
Case – Collector
Bipolar NPN Device in a
Hermetically sealed TO66
Metal Package.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Dimensions in mm (inches).
2
2
1
1
3.68
(0.145) rad.
max.
3.61 (0.142)
4.08(0.161)
rad.
0
0
1.27 (0.050)
1.91 (0.750)
9.14 (0.360)
min.
4.83 (0.190)
5.33 (0.210)
6.35 (0.250)
8.64 (0.340)
1
1
1
2
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| 2N6279 | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50A I(C) | TO-210AE |
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相關代理商/技術參數 |
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|---|---|
| 2N6264 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| 2N6270 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 80V 10A 3PIN TO-3 - Bulk |
| 2N6271 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 30A 3PIN TO-3 - Bulk |
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