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參數資料
| 型號： | 2N6990JANTXV |
| 廠商： | Microsemi Corporation |
| 英文描述： | MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR |
| 中文描述： | 多重NPN硅雙列和扁平開關晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 29K |
| 代理商： | 2N6990JANTXV |
Chip Type 2C2222A
Geometry 0400
Polarity NPN
Data S heet No. 2C2222A
Generic Packaged Parts:
2N2219, 2N2219A, 2N2222,
2N2222A
Chip type
2C2222A
by Semicoa
Semiconductors provides perfor-
mance similar to these devices.
Product Summary:
Part Numbers:
2N2222A
, 2N2222, 2N2219, 2N2219A, 2N2219AL,
2N2222AUB
, SD2222A, SD2222AF, SQ2222A,
SQ2222AF, 2N5582, 2N6989, 2N6990
APPLICATIONS:
Designed for general
purpose switching and amplifier applica-
tions.
Features:
Medium power ratings
Top
Al - 24 k min.
Au - 6.5 k nom.
4.0 mils x 4.0 mils
4.0 mils x 4.0 mils
8 mils nominal
Backside
Emitter
Base
Die Thickness
Chip Area
Top Surface
20 mils x 20 mils
Silox Passivated
Mechanical Specifications
Metallization
Bonding Pad Size
Parameter
BV
CEO
BV
CBO
BV
EBO
I
CBO
h
FE
Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less
than 300 μs, duty cycle less than 2%.
Test conditions
I
C
= 10 mA, I
B
= 0
I
C
= 10 μA, I
E
= 0
I
E
= 10 μA, I
C
= 0
V
CB
= 50 V, I
E
= 0
I
C
= 150 mA dc, V
CE
= 10 V
Min
40
75
6.0
---
100
Max
---
---
---
10
300
Unit
V dc
V dc
V dc
nA dc
---
Electrical Characteristics
T
A
= 25
o
C
相關PDF資料 |
PDF描述 |
|---|---|
| 2N6990JAN | MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR |
| 2N6990JANS | MULTIPLE NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR |
| 2N6990 | Chip Type 2C2222A Geometry 0400 Polarity NPN |
| 2N5597 | Bipolar PNP Device in a Hermetically sealed TO66 Metal Package |
| 2N5601 | 5 AMP MINIATURE POWER RELAY |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2N699A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-205AD |
| 2N699B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small Signal Transistors |
| 2N70 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:2 Amps, 700 Volts N-CHANNEL POWER MOSFET |
| 2N700 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-72 |
| 2N7000 | 功能描述:MOSFET N-CHANNEL 60V 200mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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