- 您現在的位置：買賣IC網 > PDF目錄49895 > 2SA1358-Y 1 A, 120 V, PNP, Si, POWER TRANSISTOR PDF資料下載
參數資料
| 型號： | 2SA1358-Y |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | 2-8H1A, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 119K |
| 代理商： | 2SA1358-Y |
2SA1358
2004-07-07
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1358
Audio Frequency Power Amplifier Applications
Complementary to 2SC3421
Suitable for driver of 60 to 80 watts
High breakdown voltage
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1
A
Base current
IB
100
mA
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 120 V, IE = 0
―
100
nA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
―
100
nA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
120
―
V
Emitter-base breakdown voltage
V (BR) EBO
IE = 1 mA, IC = 0
5
―
V
DC current gain
hFE
(Note)
VCE = 5 V, IC = 100 mA
80
―
240
Collector-emitter saturation voltage
VCE (sat)
IC = 500 mA, IB = 50 mA
―
0.40
1.0
V
Base-emitter voltage
VBE
VCE = 5 V, IC = 500 mA
―
0.77
1.0
V
Transition frequency
fT
VCE = 5 V, IC = 100 mA
―
120
―
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
―
30
―
pF
Note: hFE classification O: 80 to 160, Y: 120 to 240
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1360-Y | 0.05 A, 150 V, PNP, Si, POWER TRANSISTOR |
| 2SA1374CTZ | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1374CRF | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1374DRF | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA1374CRF | 100 mA, 55 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SA1358-Y(Q) | 制造商:Toshiba 功能描述:PNP Bulk 制造商:Toshiba 功能描述:Trans GP BJT PNP 120V 1A 3-Pin TO-126IS |
| 2SA1359-Y(Q) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1360-O(Q) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba 功能描述:PNP Bulk |
| 2SA1360-Y(Q) | 功能描述:兩極晶體管 - BJT Pb-FF TO126 PLS PLN-N,ACTIVE, RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SA1362 | 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANS. SC-59-15V -.8A .2WSURFACE MOUNT |
發布緊急采購，3分鐘左右您將得到回復。