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參數資料
| 型號： | 2SC3503-D |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 49K |
| 代理商： | 2SC3503-D |
92502AS (KT)/71598HA (KT)/3107KI/D134MW, TS No.1426-1/5
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Transistors
High-Definition CRT Display,
Video Output Applications
Ordering number:ENN1426C
2SA1381/2SC3503
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Electrical Characteristics at Ta = 25C
Package Dimensions
unit:mm
2009B
[2SA1381/2SC3503]
Features
High breakdown voltage : VCEO≥300V.
Small reverse transfer capacitance and excellent high
frequency characteristic
: Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V.
Adoption of MBIT process.
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* : The 2SA1381/2SC3503 are classified by 10mA hFE as follows :
Continued on next page.
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1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
( ) : 2SA1381
Specifications
Absolute Maximum Ratings at Ta = 25C
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA1381 | 0.1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SC3503-F | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SA1381-D | 0.1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-126 |
| 2SC3503FSTSTU | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 2SC3504-D | 50 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
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| 2SC3503DSTU | 功能描述:兩極晶體管 - BJT NPN 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC3503ESTU | 功能描述:兩極晶體管 - BJT NPN 300V 0.1A 7W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC3503FSTU | 功能描述:兩極晶體管 - BJT NPN 300V 0.1A 7W 512-74LVT16244MTD RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC3504 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTOR SC-5 70V .05A .9W ECB |
| 2SC3506 | 功能描述:TRANS NPN 800VCEO 3A TOP-3F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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