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參數資料
| 型號： | 2SC5563 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.02 A, 1500 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-10R1A, SC-67, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 84K |
| 代理商： | 2SC5563 |
2SC5563
2004-07-26
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5563
Dynamic Focus Applications
High voltage: VCEO = 1500 V
Small collector output capacitance: Cob = 2.0 pF (typ.) (VCB = 100 V)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
1500
V
Collector-emitter voltage
VCEO
1500
V
Emitter-base voltage
VEBO
7
V
DC
IC
20
Collector current
Pulse
ICP
40
mA
Base current
IB
10
mA
Tc = 25°C
10
Collector power
dissipation
Ta = 25°C
PC
2
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 1500 V, IE = 0
―
1
A
Emitter cut-off current
IEBO
VEB = 7 V, IC = 0
―
10
A
Collector-base breakdown voltage
V (BR) CBO
IC = 0.1 mA, IE = 0
1500
―
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = 1 mA, IB = 0
1500
―
V
DC current gain
hFE
VCE = 5 V, IC = 1 mA
10
―
60
Collector-emitter saturation voltage
VCE (sat)
IC = 10 mA, IB = 2 mA
―
5.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 10 mA, IB = 2 mA
―
1.3
V
Collector output capacitance
Cob
VCB = 100 V, f = 1 MHz, IE = 0
―
2.0
―
pF
Marking
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
C5563
Part No. (or abbreviation code)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SC5563(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 1.5KV 0.02A 3-Pin(3+Tab) TO-220NIS |
| 2SC5565-TD-E | 制造商:SANYO 功能描述:mom 30V 5A 200 to 560 PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 30V 5A SOT89 制造商:Sanyo 功能描述:0 |
| 2SC5566-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 4A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5569-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 7A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5570(Q) | 制造商:Toshiba 功能描述:NPN Cut Tape |
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