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參數資料
| 型號： | 2SD1383KA |
| 英文描述： | Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
| 中文描述： | 晶體管|晶體管|達林頓|叩| 32V的五（巴西）總裁| 300mA的一（c）|的SOT - 23VAR |
| 文件頁數： | 1/3頁 |
| 文件大小： | 51K |
| 代理商： | 2SD1383KA |
1
Transistor
2SD1302
Silicon NPN epitaxial planer type
For low-voltage output amplification
For muting
For DC-DC converter
I
Features
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Low ON resistance R
on
.
G
High foward current transfer ratio h
FE
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
25
20
12
1
0.5
600
150
–55 ~ +150
Unit
V
V
V
A
A
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
ON resistanse
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on*3
Conditions
V
CB
= 25V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 1A
*2
I
C
= 0.5A, I
B
= 20mA
I
C
= 0.5A, I
B
= 50mA
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
25
20
12
200
60
typ
0.13
200
10
1.0
max
100
800
0.4
1.2
Unit
nA
V
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
R
S
T
h
FE1
200 ~ 350
300 ~ 500
400 ~ 800
*2
Pulse measurement
*3
R
on
Measurement circuit
V
B
I
B
=1mA
R
on
= V
1000(
)
A
–V
B
f=1kHz
V=0.3V
1k
V
A
V
V
V
B
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD1383KB | TRANSISTOR | BJT | DARLINGTON | NPN | 32V V(BR)CEO | 300MA I(C) | SC-59 |
| 2SD1366A | Silicon NPN Epitaxial |
| 2SD1367 | Silicon NPN Epitaxial |
| 2SD1368 | Silicon NPN Epitaxial |
| 2SD1376 | Silicon NPN Epitaxial |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD1383KT146 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD1383KT146B | 功能描述:達林頓晶體管 NPN 32V 0.3A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| 2SD1385 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD1387 | 制造商:Distributed By MCM 功能描述:SUB ONLY SANYO TRANSISTORTO-92 20V 2A .7W ECB |
| 2SD1393 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB 50V 1.5A 30W BCE |
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