- 您現在的位置：買賣IC網 > PDF目錄49990 > 2SJ605-AZ 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數資料
| 型號： | 2SJ605-AZ |
| 元件分類： | JFETs |
| 英文描述： | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-25, 3 PIN |
| 文件頁數： | 7/8頁 |
| 文件大小： | 84K |
| 代理商： | 2SJ605-AZ |
Data Sheet D14650EJ2V0DS
7
2SJ605
PACKAGE DRAWINGS(Unit: mm)
1)
TO-220AB(MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0 TYP.
3.6±0.2
4
3.0±0.3
1.3±0.2
0.75±0.1
2.54 TYP.
5.9
MIN.
6.0
MAX.
15.5
MAX.
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
φ
2) TO-262(MP-25 Fin Cut)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
10 TYP.
1.3±0.2
0.75±0.3
2.54 TYP.
8.5±
0.2
12.7
MIN.
1.3±0.2
0.5±0.2
2.8±0.2
1.0±0
.5
4
3)
TO-263 (MP-25ZJ)
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
5.7±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
10 TYP.
0.5R
TYP.
0.8R
TYP.
2.8±0.2
4) TO-220SMD(MP-25Z)
Note
10 TYP.
1.4±0.2
1.0±0.5
2.54 TYP.
8.5±0.2
123
3.0±0.5
1.1±0.4
4
4.8 MAX.
1.3±0.2
0.5±0.2
0.5R
TYP.
0.8R
TYP.
0.75±0.3
2.8±0.2
1.Gate
2.Drain
3.Source
4.Fin (Drain)
Note This package is produced only in Japan.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD. When this device actually used,
an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
!
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ605-ZJ-AZ | 65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ606-ZJ | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SJ606 | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SJ606-Z | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ606-ZJ-AZ | 83 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ605-S | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ605-Z | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ605-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET P-CH 60V 65A 3-Pin(2+Tab) TO-220 SMD |
| 2SJ605-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SJ605-ZJ-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
發布緊急采購，3分鐘左右您將得到回復。