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參數(shù)資料
型號: 2SK2729
元件分類: JFETs
英文描述: 20 A, 500 V, 0.29 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3P, 3 PIN
文件頁數(shù): 8/12頁
文件大小: 66K
代理商: 2SK2729
2SK2729
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
V
I
D = 10mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
V
I
G = ±100A, VDS = 0
Gate to source leak current
I
GSS
±10
AV
GS = ±25V, VDS = 0
Zero gate voltege drain
current
I
DSS
——
10
AV
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.5
3.5
V
I
D = 1mA, VDS = 10V*
1
Static drain to source on state
resistance
R
DS(on)
0.24
0.29
I
D = 10A, VGS = 10V*
1
Forward transfer admittance
|y
fs|
9
15
S
I
D = 10A, VDS = 10V*
1
Input capacitance
Ciss
3300
pF
V
DS = 10V
Output capacitance
Coss
900
pF
V
GS = 0
Reverse transfer capacitance Crss
120
pF
f = 1MHz
Total gate charge
Qg
55
nc
V
DD = 400V
Gate to source charge
Qgs
14
nc
V
GS = 10V
Gate to drain charge
Qgd
17
nc
I
D = 20A
Turn-on delay time
t
d(on)
45
ns
V
GS = 10V, ID = 10A
Rise time
t
r
140
ns
R
L = 3
Turn-off delay time
t
d(off)
150
ns
Fall time
t
f
—85—
ns
Body to drain diode forward
voltage
V
DF
1.0
V
I
D = 20A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
400
ns
I
F = 20A, VGS = 0
diF/ dt = 100A/s
Note:
1. Pulse test
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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