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參數資料
| 型號： | 2SK3115 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關功率場效應晶體管 工業級 |
| 文件頁數： | 6/8頁 |
| 文件大小： | 69K |
| 代理商： | 2SK3115 |
Data Sheet D13338EJ2V0DS
6
2SK3115
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
μ
L - Inductive Load - H
1 m
10 m
100
I
A
1.0
10
0.1
10
μ
R
G
= 25
V
DD
= 150 V
V
GS
= 20
→
0 V
Starting T
ch
= 25
C
E
AS
= 24 mJ
I
AS
= 6 A
SINGLE AVALANCHE ENERGY
DERATING FACTOR
75
150
125
120
100
80
60
40
20
0
25
Starting T
ch
- Starting Channel Temperature -
C
E
50
100
V
DD
= 150 V
R
G
= 25
V
GS
= 20
→
0 V
I
AS
≤
6 A
PACKAGE DRAWING (Unit: mm)
10.0
±
0.3
3.2
±
0.2
φ
4.5
±
0.2
2.7
±
0.2
2.5
±
0.1
0.65
±
0.1
1.5
±
0.2
2.54
1.3
±
0.2
2.54
0.7
±
0.1
4
±
0
1
±
0
1
±
0
3
±
0
1
2 3
1.Gate
2.Drain
3.Source
1
M
Isolated TO-220(MP-45F)
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade
the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly
dissipate it once, when it has occurred.
EQUIVALENT CIRCUIT
Body
Diode
Source (S)
Drain (D)
Gate (G)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3116 | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-S | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-ZJ | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK311 | SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK310 | SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3115-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 6A 1200m@10V IsolatedTO220 Bulk |
| 2SK3116 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
| 2SK3116B | 制造商:NEC 制造商全稱:NEC 功能描述:7.5A600V |
| 2SK3116-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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