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參數資料
型號: 2SK3154
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET(N溝道MOSFET)
中文描述: 硅?通道場效應晶體管(不適用溝道MOSFET的)
文件頁數: 2/9頁
文件大小: 144K
代理商: 2SK3154
2SK3154
2
Note: 1. PW
10
μ
s, duty cycle
1%
2. Value at Tc = 25
°
C
Value at Tch = 25
°
C, Rg
50
Electrical Characteristics (Ta = 25
°
C)
Note: 4. Pulse test
Channel dissipation
Channel temperature
Storage temperature
Pch
Note2
Tch
Tstg
50
150
–55 to +150
W
°
C
°
C
Item
Drain to source breakdown voltage V
(BR)DSS
150
Gate to source breakdown voltage V
(BR)GSS
±
20
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Symbol
Min
Typ
0.10
0.12
14
850
300
160
13
100
195
110
0.9
140
Max
±
10
10
2.5
0.13
0.15
Unit
V
V
μ
A
μ
A
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16 V, V
DS
= 0
V
DS
= 150 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10 V
I
D
= 8 A, V
GS
= 10 V
Note4
I
D
= 8 A, V
GS
= 4 V
Note4
I
D
= 8 A, V
DS
= 10 V
Note4
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 8 A, V
GS
= 10 V
R
L
= 3.75
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
1.0
8.5
I
F
= 15 A, V
GS
= 0
I
F
= 15 A, V
GS
= 0
diF/ dt = 50 A/
μ
s
Item
Symbol
Ratings
Unit
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相關代理商/技術參數
參數描述
2SK3154-E 制造商:Renesas Electronics Corporation 功能描述:
2SK3155 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3155-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 150V 15A 3-Pin(3+Tab) TO-220FM Box
2SK3156 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK3156-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching