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參數(shù)資料
| 型號(hào)： | 2SK3298 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 69K |
| 代理商： | 2SK3298 |
Data Sheet D14059EJ1V0DS00
6
2SK3298
SINGLE AVALANCHE ENERGY vs.
INDUCTIVE LOAD
100
μ
L - Inductive Load - H
1 m
10 m
100
I
A
1.0
10
0.1
10
μ
R
G
= 25
V
DD
= 150 V
V
GS
= 20 V
→
0 V
Starting T
ch
= 25
C
E
AS
= 37.5 mJ
I
AS
= 7.5 A
SINGLE AVALANCHE ENERGY
DERATING FACTOR
75
150
125
120
100
80
60
40
20
0
25
Starting T
ch
- Starting Channel Temperature -
C
E
50
100
V
DD
=
150
V
R
G
=
25
V
GS
=
20 V
→
0 V
I
AS
≤
7.5
A
PACKAGE DRAWING (Unit : mm)
Isolated TO-220 (MP-45F)
EQUIVALENT CIRCUIT
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
10.0
±
0.3
3.2
±
0.2
φ
4.5
±
0.2
2.7
±
0.2
2.5
±
0.1
0.65
±
0.1
1.5
±
0.2
2.54 TYP.
1.3
±
0.2
2.54 TYP.
0.7
±
0.1
4
±
0
1
±
0
1
±
0
3
±
0
1
2 3
1.Gate
2.Drain
3.Source
1
Body
Diode
Source (S)
Drain (D)
Gate (G)
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK3298-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 750m@10V IsolatedTO220 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 750m@10V IsolatedTO220 Bulk |
| 2SK3299 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3299-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3299-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK33 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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