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參數資料
| 型號： | 2SK3408 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 43 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-96, MINI MOLD PACKAGE-3 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 2SK3408 |
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2000
MOS FIELD EFFECT TRANSISTOR
2SK3408
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D15016EJ4V0DS00 (4th edition)
Date Published May 2003 NS CP(K)
Printed in Japan
The mark 5
5
5 shows major revised points.
DESCRIPTION
The 2SK3408 is a switching device which can be driven
directly by a 4.0 V power source.
The 2SK3408 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of dynamic clamp of relay and so on.
FEATURES
Can be driven by a 4.0 V power source
Low on-state resistance
RDS(on)1 = 195 m
MAX. (VGS = 10.0 V, ID = 0.5 A)
RDS(on)2 = 250 m
MAX. (VGS = 4.5 V, ID = 0.5 A)
RDS(on)3 = 260 m
MAX. (VGS = 4.0 V, ID = 0.5 A)
Built-in G-S protection diode against ESD.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3408
SC-96 Mini Mold (Thin Type)
Marking: XF
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
43 ±5
V
Drain to Gate Voltage (VGS = 0 V)
VDGS
43 ±5
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TA = 25°C)
ID(DC)
±1.0
A
Drain Current (pulse)
Note1
ID(pulse)
±4.0
A
Total Power Dissipation (TA = 25°C)
PT1
0.20
W
Total Power Dissipation (TA = 25°C)
Note2
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Mounted on 250 mm
2 x 35
m copper pad connected to drain electrode in 2500 mm2 x 1.6 mm FR-4
board, t
≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–0.06
2.8
±0.2
1.5
0.95
1
2
3
1.9
2.9 ±0.2
0.4
+0.1
–0.05
0.95
0.65
+0.1 –0.15
1: Gate
2: Source
3: Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
5
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3408(0)-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET - Bulk |
| 2SK3408-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3408-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 48V 1A 3-Pin SC-96 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,43V,1.0A,0.155ohm,SC-96MM 制造商:Renesas 功能描述:Trans MOSFET N-CH 48V 1A 3-Pin SC-96 T/R |
| 2SK3411 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
| 2SK3412 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
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