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參數資料
| 型號： | 2SK3499 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-9F1C, 4 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 178K |
| 代理商： | 2SK3499 |
2SK3499
2010-04-13
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3499
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 0.4 (typ.)
High forward transfer admittance: |Yfs| = 8.0 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 400 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
400
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
400
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
10
Drain current
Pulse (Note 1)
IDP
40
A
Drain power dissipation (Tc
= 25°C)
PD
80
W
Single pulse avalanche energy
(Note 2)
EAS
360
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.56
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.85 mH, RG = 25 Ω, IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-9F1C
Weight: 0.74 g (typ.)
1
3
4
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3499_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications |
| 2SK3499_10 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications |
| 2SK350 | 制造商:HITACHI 功能描述: |
| 2SK3501-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.58Ohm;ID +/-12A;TO-220AB;PD 195W;VGS +/-3 |
| 2SK3501-01SC | 制造商:Fuji Electric 功能描述: |
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