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參數資料
| 型號： | 2SK3596-01L |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 30 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TPACK-3 |
| 文件頁數： | 2/4頁 |
| 文件大?。?/td> | 257K |
| 代理商： | 2SK3596-01L |
2
Characteristics
2SK3596-01L,S,SJ
FUJI POWER MOSFET
ID=f(VGS):80s Pulse test, VDS=25V,Tch=25°C
ID=f(VDS):80s Pulse test,Tch=25°C
gfs=f(ID):80s Pulse test, VDS=25V,Tch=25°C
RDS(on)=f(ID):80s Pulse test, Tch=25°C
02
46
8
10
12
0
20
40
60
80
100
120
20V
7.0V
10V
8V
6.5V
7.5V
6.0V
ID
[A]
VDS [V]
Typical Output Characteristics
VGS=5.5V
0123
4
5
6789
10
0.1
1
10
100
ID[A]
VGS[V]
Typical Transfer Characteristic
0.1
1
10
100
0.1
1
10
100
gfs
[S]
ID [A]
Typical Transconductance
0
20
40
60
80
100
120
0.00
0.05
0.10
0.15
0.20
7.0V
6.5V
RDS(on)
[
]
ID [A]
Typical Drain-Source on-state Resistance
10V
20V
8V
7.5V
6.0V
VGS=
5.5V
0
25
50
75
100
125
150
0
50
100
150
200
250
300
Allowable Power Dissipation
PD=f(Tc)
P
D
[W
]
Tc [
°C]
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
800
I
AS
=18A
I
AS
=27A
I
AS
=45A
EA
S
[m
J
]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
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