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參數(shù)資料
| 型號(hào)： | 2SK975TZ-E |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-51, TO-92MOD, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大小： | 88K |
| 代理商： | 2SK975TZ-E |
2SK975
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
50
100
0
Case Temperature TC (°C)
150
0.5
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
1.0
1.5
Maximum Safe Operation Area
Drain
Current
I
D
(A)
0.3
1.0
3
0.1
0.3
1.0
10
3
10
Drain to Source Voltage VDS (V)
0.1
100
0.03
30
0.01
100
s
1 ms
PW
= 10
ms
(1
Shot)
DC
Operat
ion
Ta = 25
°C
10
s
Operation in this area
is limited by RDS (on)
Typical Output Characteristics
6
Drain to Source Voltage VDS (V)
8
4
2
10
Drain
Current
I
D
(A)
0
1
2
3
4
0
5
VGS = 2.5 V
Pulse Test
10 V
5 V
4 V
3 V
3.5 V
4.5 V
7 V
Typical Transfer Characteristics
3
Gate to Source Voltage VGS (V)
4
2
1
05
1
2
3
4
5
0
Drain
Current
I
D
(A)
–25
°C
TC= 25°C
75
°C
VDS = 10 V
Pulse Test
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage VGS (V)
8
4
2
010
0.4
0.6
0.8
1.0
0
0.2
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Pulse Test
ID = 0.5 A
2 A
1 A
0.5
Drain Current ID (A)
1.0
0.2
0.1
5
0.2
0.5
1.0
2
5
0.05
0.1
0.05
2
Static Drain to Source On State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
VGS = 4 V
10 V
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK979 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK979 |
| 2SK981 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3A I(D) | TO-221VAR |
| 2SK981A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 3A I(D) | TO-221VAR |
| 2SK982 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK982(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 |
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