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參數資料
| 型號： | 2T1 |
| 廠商： | Avic Technology |
| 英文描述： | SOT-23 Plastic-Encapsulate Transistors |
| 中文描述： | 采用SOT - 23塑料封裝晶體管 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 37K |
| 代理商： | 2T1 |
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2.4
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SOT-23 Plastic-Encapsulate Transistors
AV
9012LT1
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM:
0.3 W (Tamb=25
℃
)
Collector current
I
CM:
-0.5 A
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
℃
to +150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= -100
μ
A, I
E
=0
-40
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= -1mA, I
B
=0
-25
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=-100
μ
A, I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
=-40 V, I
E
=0
-0.1
μ
A
Collector cut-off current
I
CEO
V
CE
=-20V, I
B
=0
-0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
= -5V, I
C
=0
-0.1
μ
A
h
FE(1)
V
CE
=-1V, I
C
= -50mA
120
400
DC current gain
h
FE(2)
V
CE
=-1V, I
C
=-500mA
40
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=-500 mA, I
B
= -50mA
-0.6
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=-500 mA, I
B
= -50mA
-1.2
V
Transition frequency
f
T
V
CE
=-6V, I
C
= -20mA
f=
30MHz
150
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
L
H
J
120-200
200-350
300-400
DEVICE MARKING
S9012LT1=2T1
Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
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