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參數資料
| 型號： | 41LV16100B-60TLI |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
| 中文描述： | 100萬× 16（16兆）動態與江戶頁面模式內存 |
| 文件頁數： | 20/22頁 |
| 文件大小： | 152K |
| 代理商： | 41LV16100B-60TLI |
IS41LV16100B
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
7
Rev. B
04/13/05
ISSI
AC CHARACTERISTICS(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-50
-60
Symbol
Parameter
Min.
Max.
Min.
Max.
Units
tRC
Random READ or WRITE Cycle Time
85
—
110
—
ns
tRAC
Access Time from
RAS(6, 7)
—50
—
60
ns
tCAC
Access Time from
CAS(6, 8, 15)
—14
—
15
ns
tAA
Access Time from Column-Address(6)
—25
—
30
ns
tRAS
RAS Pulse Width
50
10K
60
10K
ns
tRP
RAS Precharge Time
30
—
40
—
ns
tCAS
CAS Pulse Width(26)
8
10K
10
10K
ns
tCP
CAS Precharge Time(9,25)
9—
10
—
ns
tCSH
CAS Hold Time (21)
50
—
60
—
ns
tRCD
RAS to CAS Delay Time(10, 20)
12
37
20
45
ns
tASR
Row-Address Setup Time
0
—
0
—
ns
tRAH
Row-Address Hold Time
8
—
10
—
ns
tASC
Column-Address Setup Time(20)
0—
ns
tCAH
Column-Address Hold Time(20)
8—
10
—
ns
tAR
Column-Address Hold Time
30
—
40
—
ns
(referenced to
RAS)
tRAD
RAS to Column-Address Delay Time(11)
14
25
15
30
ns
tRAL
Column-Address to
RAS Lead Time
25
—
30
—
ns
tRPC
RAS to CAS Precharge Time
5
—
5
—
ns
tRSH
RAS Hold Time(27)
14
—
15
—
ns
tCLZ
CAS to Output in Low-Z(15, 29)
0—
ns
tCRP
CAS to RAS Precharge Time(21)
5—
ns
tOD
Output Disable Time(19, 28, 29)
312
3
12
ns
tOE/tOEA
Output Enable Time(15, 16)
—14
—
15
ns
tOEHC
OE HIGH Hold Time from CAS HIGH
15
—
15
—
ns
tOEP
OE HIGH Pulse Width
10
—
10
—
ns
tOES
OE LOW to CAS HIGH Setup Time
5
—
5
—
ns
tRCS
Read Command Setup Time(17,20)
0—
ns
tRRH
Read Command Hold Time
0
—
0
—
ns
(referenced to
RAS)(12)
tRCH
Read Command Hold Time
0
—
0
—
ns
(referenced to
CAS)(12,17,21)
tWCH
Write Command Hold Time(17,27)
8—
10
—
ns
tWCR
Write Command Hold Time
40
—
50
—
ns
(referenced to
RAS)(17)
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