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參數資料
| 型號： | 6MBI100S-060 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Module |
| 中文描述： | 100 A, 600 V, N-CHANNEL IGBT |
| 封裝： | MODULE-39 |
| 文件頁數： | 7/13頁 |
| 文件大?。?/td> | 535K |
| 代理商： | 6MBI100S-060 |
H04-004-03
MS5F5327
13
Reliability Test Items
Test
cate-
gories
Test items
Test methods and conditions
Reference
norms
EIAJ
ED-4701
D - 313
Number
of sample
Accept-
ance
number
1 High temperature
Reverse Bias
+0
: Ta = 125
-5
℃
(Tj
≦
150
℃
)
: VC = 0.8×VCES
: Applied DC voltage to C-E
VGE = 0V
: 1000hr.
+0
: Ta = 125
-5
℃
(Tj
≦
150
℃
)
: VC = VGE = +20V or -20V
: Applied DC voltage to G-E
VCE = 0V
: 1000hr.
: 2 sec.
: 18 sec.
:
'
Tj=100±5 deg
Tj
≦
150
℃
, Ta=25±5
℃
: 15000 cycles
5
( 1 : 0 )
Test temp.
Bias Voltage
Bias Method
Test duration
2 High temperature
Reverse Bias
D - 323
5
( 1 : 0 )
Test temp.
Bias Voltage
Bias Method
Test duration
ON time
OFF time
Test temp.
3 Intermitted
Operating Life
(Power cycle)
( for IGBT )
D - 322
5
( 1 : 0 )
Number of cycles
E
Failure Criteria
Item
Characteristic
Symbol
Failure criteria
Lower limit Upper limit
-
-
LSL×0.8
-
-
-
Unit
Note
Electrical
characteristic
Leakage current
ICES
±IGES
VGE(th)
VCE(sat)
VF
'
VGE
or
'
VCE
'
VF
Viso
USL×2
USL×2
USL×1.2
USL×1.2
USL×1.2
USL×1.2
mA
P
A
mA
V
V
mV
Gate threshold voltage
Saturation voltage
Forward voltage
Thermal
resistance
IGBT
FWD
-
USL×1.2
mV
-
Isolation voltage
Visual inspection
Peeling
Plating
and the others
Broken insulation
Visual
inspection
-
The visual sample
-
LSL : Lower specified limit.
USL : Upper specified limit.
Note : Each parameter measurement read-outs shall be made after stabilizing the components
at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests.
And in case of the wetting tests, for example, moisture resistance tests, each component
shall be made wipe or dry completely before the measurement.
7
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| 6MBI100S-120-50 | 制造商:Fuji Electric 功能描述:6-PACK IGBT MODULE 100A 1200V NPT 制造商:Fuji Electric 功能描述:6-PACK IGBT, MODULE, 100A, 1200V NPT 制造商:Fuji Electric 功能描述:6-PACK IGBT, MODULE, 100A, 1200V NPT; Transistor Type:IGBT Module; DC Collector Current:150A; Collector Emitter Voltage Vces:2.6V; Power Dissipation Pd:700W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:21 ;RoHS Compliant: Yes |
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