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參數資料
| 型號： | 934038480127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 600 V, 12 A, SNUBBERLESS TRIAC, TO-220AB |
| 封裝： | PLASTIC, TO-220F, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 50K |
| 代理商： | 934038480127 |
Philips Semiconductors
Product specification
Three quadrant triacs
BTA212X series B
high commutation
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated high commutation
SYMBOL
PARAMETER
MAX.
MAX. UNIT
triacs in a full pack, plastic envelope
intended for use in circuits where high
BTA212X-
500B
600B
800B
static and dynamic dV/dt and high
V
DRM
Repetitive peak off-state
500
600
800
V
dI/dt can occur. These devices will
voltages
commutate the full rated rms current
I
T(RMS)
RMS on-state current
12
A
at
the
maximum
rated
junction
I
TSM
Non-repetitive peak on-state
95
A
temperature, without the aid of a
current
snubber.
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 1
2
main terminal 2
3
gate
case
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
-800
V
DRM
Repetitive peak off-state
-
500
1
600
1
800
V
voltages
I
T(RMS)
RMS on-state current
full sine wave;
-
12
A
T
hs ≤ 56 C
I
TSM
Non-repetitive peak
full sine wave;
on-state current
T
j = 25 C prior to
surge
t = 20 ms
-
95
A
t = 16.7 ms
-
105
A
I
2tI2t for fusing
t = 10 ms
-
45
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 20 A; IG = 0.2 A;
100
A/
s
on-state current after
dI
G/dt = 0.2 A/s
triggering
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms
-
0.5
W
period
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
T1
T2
G
12 3
case
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/
s.
September 1997
1
Rev 1.200
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