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參數資料
| 型號： | 934041010118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 51K |
| 代理商： | 934041010118 |
Philips Semiconductors
Product specification
Rectifier diodes
BYV32E, BYV32EB series
ultrafast, rugged
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R = 100/ 150 V/ 200 V
Fast switching
Soft recovery characteristic
V
F
≤ 0.85 V
Reverse surge capability
High thermal cycling performance
I
O(AV) = 20 A
Low thermal resistance
I
RRM = 0.2 A
t
rr
≤ 25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32E series is supplied in the SOT78 conventional leaded package.
The BYV32EB series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
1
3
anode 2 (a)
tab
cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV32E / BYV32EB
-100
-150
-200
V
RRM
Peaqk repetitive reverse
-
100
150
200
V
voltage
V
RWM
Crest working reverse voltage
-
100
150
200
V
R
Continuous reverse voltage
-
100
150
200
V
I
O(AV)
Average rectified output current square wave;
δ = 0.5;
-
20
A
(both diodes conducting)
T
mb
≤ 115 C
I
FRM
Repetitive peak forward current t = 25
s; δ = 0.5;
-
20
A
per diode
T
mb
≤ 115 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
125
A
current per diode
t = 8.3 ms
-
137
A
sinusoidal; with reapplied
V
RWM(max)
I
RRM
Repetitive peak reverse current t
p = 2
s; δ = 0.001
-
0.2
A
per diode
I
RSM
Non-repetitive peak reverse
t
p = 100
s
-
0.2
A
current per diode
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1 It is not possible to make connection to pin 2 of the SOT404 package
k
a1
a2
13
2
13
tab
2
12 3
tab
August 2001
1
Rev 1.300
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