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參數(shù)資料
型號: 934047050127
廠商: NXP SEMICONDUCTORS
元件分類: 整流器
英文描述: 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-247
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 1/5頁
文件大小: 39K
代理商: 934047050127
Philips Semiconductors
Product specification
Rectifier diodes
PBYR30100WT series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 60 V/ 80 V/ 100 V
Reverse surge capability
High thermal cycling performance
I
O(AV) = 30 A
Low thermal resistance
V
F ≤ 0.7 V
GENERAL DESCRIPTION
PINNING
SOT429 (TO247)
Schottky rectifier diodes in a plastic
PIN
DESCRIPTION
envelope. Intended for use as
output rectifiers in low voltage, high
1
anode 1
frequency switched mode power
supplies.
2
cathode
The
PBYR30100WT
series
is
3
anode 2
supplied in the conventional leaded
SOT429 (TO247) package.
mounting cathode
base
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR30
60WT
80WT
100WT
V
RRM
Peak repetitive reverse
-
60
80
100
V
voltage
V
RWM
Working peak reverse
-
60
80
100
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 139 C
-
60
80
100
V
I
O(AV)
Average rectified output
square wave;
δ = 0.5;
-
30
A
current (both diodes
T
mb ≤ 124 C
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5;
-
30
A
current per diode
T
mb ≤ 124 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
180
A
current per diode
t = 8.3 ms
-
200
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
1.4
K/W
to mounting base
both diodes
-
1
K/W
R
th j-a
Thermal resistance junction
in free air
-
45
-
K/W
to ambient
k
a1
a2
13
2
3
1
November 1998
1
Rev 1.300
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