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參數資料
| 型號： | 934053940118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.5 A, 20 V, SILICON, RECTIFIER DIODE |
| 文件頁數： | 1/6頁 |
| 文件大小： | 66K |
| 代理商： | 934053940118 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYR325CTD series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 20 V/ 25 V
Reverse surge capability
High thermal cycling performance
I
O(AV) = 3 A
Low thermal resistance
V
F ≤ 0.4 V
GENERAL DESCRIPTION
PINNING
SOT428
Dual
schottky
rectifier
diodes
PIN
DESCRIPTION
intended for use as output rectifiers
in low voltage, high frequency
1
anode 1
switched mode power supplies.
2
cathode
1
The
PBYR325CTD
series
is
supplied in the SOT428 surface
3
anode 2
mounting package.
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR3
20CTD
25CTD
V
RRM
Peak repetitive reverse
-
20
25
V
voltage
V
RWM
Working peak reverse
-
20
25
V
voltage
V
R
Continuous reverse voltage
T
mb ≤ 125 C
-
20
25
V
I
O(AV)
Average rectified output
square wave;
δ = 0.5; T
mb ≤ 144 C
-
3
A
current (both diodes
conducting)
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
mb ≤ 144 C
-
3
A
current per diode
I
FSM
Non-repetitive peak forward
t = 10 ms
-
55
A
current per diode
t = 8.3 ms
-
60
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
k
a1
a2
13
2
1
2
3
tab
1 it is not possible to make connection to pin 2 of the SOT428 package
February 1998
1
Rev 1.000
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