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參數資料
| 型號： | 934055524127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 35K |
| 代理商： | 934055524127 |
Philips Semiconductors
Product specification
Rectifier diodes
PBYR10100X series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R = 100 V
Reverse surge capability
High thermal cycling performance
I
F(AV) = 10 A
Isolated mounting tab
V
F ≤ 0.74 V
GENERAL DESCRIPTION
PINNING
SOD113 (SOT186A)
Schottky rectifier diodes in a plastic
PIN
DESCRIPTION
envelope with electrically isolated
mounting tab. Intended for use as
1
cathode
output rectifiers in low voltage, high
frequency switched mode power
2
anode
supplies.
case
isolated
The PBYR10100 series is supplied
in the conventional leaded SOD113
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
Peak repetitive reverse
-
100
voltage
V
V
RWM
Working peak reverse
-
100
V
voltage
V
R
Continuous reverse voltage
T
hs ≤ 115 C
-
100
V
I
F(AV)
Average rectified forward
square wave;
δ = 0.5; T
hs ≤ 114 C
-
10
A
current
I
FRM
Repetitive peak forward
square wave;
δ = 0.5; T
hs ≤ 114 C
-
20
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
135
A
current
t = 8.3 ms
-
150
A
sinusoidal; T
j = 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
150
C
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
-
2500
V
both terminals to external
waveform;
heatsink
R.H.
≤ 65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz
-
10
-
pF
to external heatsink
k
a
12
case
November 1999
1
Rev 1.000
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