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參數資料
| 型號： | A-1612-C-02DB |
| 廠商： | INTERNATIONAL MANUFACTURING SERVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | 0 MHz - 2000 MHz RF/MICROWAVE FIXED ATTENUATOR |
| 封裝： | ROHS COMPLIANT, SURFACE MOUNT PACKAGE-4 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 165K |
| 代理商： | A-1612-C-02DB |
50 Schoolhouse Lane
Portsmouth, RI 02871
Tel (401) 683-9700
Fax (401) 683-5571
e-mail: ims@ims-resistors.com
http://www.ims-resistors.com
*Performs within spec to 20 GHz when mounted fac
ff
e down.
Features
Thin film technology
Full Wraparound
Nickel Barrier for
excellent solderability
Attenuation from 0 dB to 10
dB in 1 dB increments,
16 dB (A-1206, A-1612),
20 dB (A-1612)
VSWR 1.5:1 max.
(A-0402),1.3:1 all others
Thin Film Surface Mount Chip
Attenuators
The
ims A-Series thin film surfac
ff
e mount chip attenuator line is ideal for
applications requiring precision attenuation in a small form factor
packages. The attenuators are provided in the “
π” configuration. Thin
film technology insures a low noise, precise attenuator at a very aff
ff o
ff rdable
price. The wraparound terminations include a nicke
k
k l barrier layer which
aff
ff o
ff rds excellent solderabi
rr
lity
tt and mechanical integrity
tt .
y
y This chip attenuator
line has the fo
ff llowing featu
ff
res:
Precision thin film attenuator element
99.5% Al
2O3 substrate material
Nicke
k
k l barrier layer for excellent solderability
tt and mechanical
integrity
Ultra low noise attenuato
tt
r element
Excellent high frequency performance
ff
Low inductance and parasitic capacitance
Stable characteristics over temperature andtime
Polyimide passivation of attenuator element
Av
A
A ailable in bulk or on tape and reel
Terminations
Attenuation Ranges
Frequency Characteristics
11.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
02468
10
12
14
A
ttenuation
(dB)
Frequency (GHz)
10 dB
8 dB
6 dB
4 dB
3 dB
2 dB
VSWR
1.6
1.4
1.2
1.0
Frequency Characteristics (A-0805)*
A
The A-Series is available in values from 0dB to 10 dB in 1 dB
increments. Standard impedance is
Full wraparound
A-0603,0805,1206,1612
100% Matte Tin Finish
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