
AD8057/AD8058
–4–
REV. A
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AD8057/AD8058 feature proprietary ESD protection circuitry, permanent damage
may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
1
SupplyVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6V
InternalPowerDissipation
2
SmallOutlinePackage (R) . . . . . . . . . . . . . . . . . . . . . 0.8W
SOT-23-5 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W
μ
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . .
±
V
S
DifferentialInputVoltage . . . . . . . . . . . . . . . . . . . . . .
±
4.0V
Output Short Circuit Duration
. . . . . . . . . . . . . . . . . . . . . . . Observe Power Derating Curves
Storage Temperature Range (R) . . . . . . . . . –65
°
C to +125
°
C
Operating Temperature Range (A Grade) . . –40
°
C to +85
°
C
Lead Temperature Range (Soldering10sec) . . . . . . . +300
°
C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air:
8-Lead SOIC Package:
θ
= 160
°
C/W
5-Lead SOT-23-5 Package:
θ
= 240
°
C/W
8-Lead
μ
SOIC Package:
θ
JA
= 200
°
C/W
ORDERING GUIDE
Temperature
Range
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
–40
°
C to +85
°
C
Package
Descriptions
Package
Options
Model
Brand Code
AD8057AR
AD8057ACHIPS
AD8057AR-REEL
AD8057AR-REEL7
AD8057ART-REEL
AD8057ART-REEL7
AD8058AR
AD8058ACHIPS
AD8058AR-REEL
AD8058AR-REEL7
AD8058ARM
AD8058ARM-REEL
AD8058ARM-REEL7
8-Lead Narrow Body SOIC
Die
8-Lead SOIC, 13" Reel
8-Lead SOIC, 7" Reel
5-Lead SOT-23, 13" Reel
5-Lead SOT-23, 7" Reel
8-Lead Narrow Body SOIC
Die
8-Lead SOIC, 13" Reel
8-Lead SOIC, 7" Reel
8-Lead
μ
SOIC
8-Lead
μ
SOIC, 13" Reel
8-Lead
μ
SOIC, 7" Reel
SO-8
Waffle Pak
SO-8
SO-8
RT-5
RT-5
SO-8
Waffle Pak
SO-8
SO-8
RM-8
RM-8
RM-8
Standard
N/A
Standard
Standard
H7A
H7A
Standard
N/A
Standard
Standard
H8A
H8A
H8A
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the
AD8057/AD8058 is limited by the associated rise in junction
temperature. Exceeding a junction temperature of +175
°
C for
an extended period can result in device failure. While the
AD8057/AD8058 is internally short circuit protected, this may
not be sufficient to guarantee that the maximum junction tem-
perature (+150
°
C) is not exceeded under all conditions.
To ensure proper operation, it is necessary to observe the maxi-
mum power derating curves.
AMBIENT TEMPERATURE –
8
C
2.0
1.5
0
–50
80
–40
M
–30 –20 –10
0
10
20
30
40
50
60
70
1.0
0.5
90
T
J
= +150
8
C
8-LEAD SOIC PACKAGE
m
SOIC
SOT-23-5
Figure 2. Plot of Maximum Power Dissipation vs.
Temperature