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參數資料
| 型號： | AM81214-030 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.250 INCH, FM-2 |
| 文件頁數： | 1/1頁 |
| 文件大小： | 39K |
| 代理商： | AM81214-030 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS T
C = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 10 mA
55
V
BVCER
IC = 20 mA
RBE = 10
55
V
BVEBO
IE = 1.0 mA
3.5
V
ICES
VCE = 28 V
5.0
mA
hFE
VCE = 5.0 V
IC = 1.0 A
15
150
---
PIN
PG
η
C
VCC = 28 V
PIN = 5.0 W f = 1215 to 1400 MHz
26
7.2
45
36
8.5
49
W
dB
%
NPN SILICON RF POWER TRANSISTOR
AM81214-030
DESCRIPTION:
The
ASI AM81214-030 is Designed for
1215 – 1400 MHz, L-Band Radar
Applications.
FEATURES:
Internal Input/Output Matching Network
P
G = 7.2 dB at 5.0 W(peak)/1400 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
2.75 A
VCC
32 V
PDISS
63 W @ TC = 25 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θ
JC
2.4 °C/W
PACKAGE STYLE .250 2L FLG
COMMON BASE
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